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Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures

: Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.


Materials Science and Engineering, B. Solid state materials for advanced technology 22 (1993), No.1, pp.89-92
ISSN: 0921-5107
Symposium B "Low Temperature Molecular Beam Epitaxial III-V Materials. Physics and Applications" <1993, Strasbourg>
European Materials Research Society (Spring Meeting) <1993, Strasbourg>
Conference Paper, Journal Article
Fraunhofer HHI ()
aluminium compounds; annealing; deep levels; electronic conduction in crystalline semiconductor thin films; gallium arsenide; high electron mobility transistors; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductors; molecular beam epitaxy; resistivity; temperature dependence; deep traps; high electron mobility transistor structures; gate layers; 100 deg C; InP; AlInAs-InP; GaInAs-InP; GaInAs-AlInAs

In this paper the authors summarize basic material properties of low temperature (LT) molecular beam epitaxy (MBE) grown Al(Ga)InAs. A lower MBE growth temperature limit for these alloys is given by the incorporation of excess arsenic occurring near a growth temperature of 100 degrees C. The specific resistivity increases with the Al content, and its growth temperature dependence is correlated with the incorporation of deep traps. In situ annealing of LT-Al(Ga)InAs layers was found to have virtually no effect on the electrical properties. In GaInAs/AlInAs high electron mobility transistor structures LT-MBE was applied to the buffer, spacer, and gate layers to improve device characteristics.