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Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy

: Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.


Journal of Crystal Growth 135 (1994), No.3-4, pp.463-8
ISSN: 0022-0248
Journal Article
Fraunhofer HHI ()
aluminium compounds; gallium arsenide; iii-v semiconductors; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; zinc; doping characteristics; nonintentionally doped inalas; background doping levels; low-pressure metalorganic vapour phase epitaxy; lattice-matched; dominant impurity; v/iii ratio; zn-doping; Al content; diffusivity; acceptor passivation; InP; In(Ga)AlAs:Zn layers

Doping properties of undoped and Zn-doped In(Ga)AlAs layers grown lattice-matched on InP by low-pressure metalorganic vapour phase epitaxy (MOVPE) were investigated. In non-intentionally doped InAlAs, oxygen proves to be the dominant impurity the incorporation of which was, however, found to strongly depend on the V/III ratio. Background doping levels as low as 2*1015 cm-3 were achieved in these layers. Zn-doping in InAlAs is incorporation-limited to a level of about 3*1018 cm-3, but increases with decreasing Al content in InGaAlAs. The diffusivity of Zn during growth appears to be favourably lower in InAlAs as compared to InP. Finally, the well-known effect of acceptor passivation was not encountered with the present MOVPE conditions.