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Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP



Electronics Letters 32 (1996), No.12, pp.1139-41
ISSN: 0013-5194
Journal Article
Fraunhofer HHI ()
aluminium compounds; distributed amplifiers; gallium arsenide; high electron mobility transistors; iii-v semiconductors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; semiconductor epitaxial layers; semiconductor growth; waveguide integrated hemts; mbe; bit rates; patterned optical waveguide surfaces; distributed amplifier; integrated optoelectronic receiver; reference devices; 1.55 micrometre; 20 Gbit/s; 40 Gbit/s; AlInAs-GaInAs; inp

The successful fabrication of AlInAs/GaInAs HEMTs, regrown by MBE on patterned optical waveguide surfaces after the local removal of a previously grown photodiode layer stack, is reported. The devices are part of a distributed amplifier within an integrated optoelectronic receiver intended to operate at a 1.55 mu m wavelength and at bit rates of 20 and/or 40 Gbit/s. The performance of the HEMTs is highly comparable to reference devices grown on planar surfaces.