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Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures

: Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.


IPRM '96. Eigth International Conference on Indium Phosphide and Related Materials. Proceedings
International Conference on Indium Phosphide and Related Materials (IPRM) <8, 1996, Schäbisch Gmünd>
Conference Paper
Fraunhofer HHI ()
aluminium compounds; carrier density; conduction bands; fermi level; gallium arsenide; hall effect; high electron mobility transistors; iii-v semiconductors; indium compounds; interface states; passivation; silicon compounds; surface potential; sinx passivation; GaInAs; AlInAs; HEMT layer structures; surface fermi level; ga0.47in0.53as; al0.48in0.52as; hall measurements; InP-based HEMT-type van der pauw structures; pecvd sinx surface passivation; conduction band-edge; semiconductors; low deposition temperatures; GaInAs cap layer; dc channel resistivity; source; drain region; sin; inp

The surface Fermi level of Ga0.47In0.53As and Al0.48In0.52As is determined by Hall measurements on InP-based HEMT-type van der Pauw structures without and with downstream PECVD SiNx surface passivation. The passivation increases the surface Fermi level towards the conduction band-edge for both semiconductors in particular for low deposition temperatures. While the increase is clearly noticeable on GaInAs it appears less marked on AlInAs. From the finding that the resulting enhancement of carrier density in the GaInAs cap layer does not lower the DC channel resistivity of SiNx passivated HEMT devices conclusions can be drawn about the path of the current in the source and drain regions.