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LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas

: Roehle, H.; Schroeter-Janssen, H.


IPRM '96. Eigth International Conference on Indium Phosphide and Related Materials. Proceedings
International Conference on Indium Phosphide and Related Materials (IPRM) <8, 1996, Schäbisch Gmünd>
Conference Paper
Fraunhofer HHI ()
economics; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; photoluminescence; semiconductor device manufacture; semiconductor doping; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; lp-movpe growth; N2 carrier gas; band gap; background doping levels; low-temperature luminescence properties; doping behaviour; hydrogen process; growth rates; flow rate; layer uniformity; thickness; pl wavelength; laser parameters; threshold current density; material composition; cost; 1.55 mum; InGaAsP-InP; InGaAsP:Fe; InGaAsP:Zn; InP; N2

Layers of InP and InGaAsP layers of different band gap were grown using nitrogen as carrier gas. Background doping levels are fully comparable with reference layers grown under hydrogen. This equivalence also holds for the RT and low-temperature luminescence properties. The doping behaviour of zinc and iron does not show any substantial differences to the hydrogen process. The growth rates generally decrease by a factor of almost 50% when using nitrogen instead of hydrogen at the same flow rate. Under nitrogen a remarkable improvement in layer uniformity in terms of thickness and PL wavelength is obtained for InGaAsP layers over the whole compositional range. This improvement duplicates for the PL wavelength of quantum wells. The basic laser parameters, especially the threshold current density, of 1.55 mu m bulk-laser structures show at least equivalent, if not superior data. The cost aspects are closely dependent on the specific material composition to be grown.