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Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth



Electronics Letters 32 (1996), No.23, pp.2142-3
ISSN: 0013-5194
Journal Article
Fraunhofer HHI ()
aluminium compounds; gallium compounds; HEMT integrated circuits; iii-v semiconductors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; p-i-n photodiodes; photolithography; semiconductor epitaxial layers; semiconductor growth; travelling wave amplifiers; pin-HEMT photoreceiver; monolithically integrated photoreceiver; waveguide integrated photodiode; travelling wave HEMT amplifier; clearly open eye; pseudo-random bit stream; high speed performance; photolithographically defined devices; mbe; 1.55 micrometre; 27 GHz; 20 Gbit/s; 0.7 micron; AlInAs-GaInAs; inp

A monolithically integrated photoreceiver is presented. Based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidth of 27 GHz is measured and a clearly open eye is obtained for a 20 Gbit/s pseudo-random bit stream. This high speed performance was achieved with photolithographically defined 0.7 mu m gate length HEMTs, regrown by MBE on semi-insulating GaInAsP waveguide layers.