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Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere

: Roehle, H.; Schroeter-Janssen, H.; Kaiser, R.


Journal of Crystal Growth 170 (1997), No.1-4, pp.109-112
ISSN: 0022-0248
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) <8, 1996, Cardiff>
Conference Paper, Journal Article
Fraunhofer HHI ()
crystal structure; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor quantum wells; vapour phase epitaxial growth; lp movpe; layer structures; carrier gas effects; layer uniformity; layer thickness; quantum wells; selective area growth; mesa edges; wavelength variation; threshold current density; 650 c; 30 mbar; InGaAsP-InP; inp; InP-InP; h2; n2

Layer structures comprising InP and InGaAsP were compared when grown using nitrogen versus hydrogen as carrier gas. Under nitrogen a remarkable improvement in layer uniformity in terms of thickness and PL wavelength is obtained for InGaAsP layers over the whole compositional range. This improvement duplicates for the PL wavelength of quantum wells. The selective-area growth behaves differently regarding the excess growth at mesa edges and the wavelength variation in the vicinity of masked areas. The basic laser parameters, especially the threshold current density, of 1.55 mu m bulk- and MQW-laser structures show at least equivalent, if not superior data when grown under nitrogen.