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MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP

: Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.

Journal of Crystal Growth 175-1762 (1997), pp.940-944
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <9, 1996, Malibu/Calif.>
Conference Paper, Journal Article
Fraunhofer HHI ()
beryllium; carrier density; gallium arsenide; hall mobility; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; reflection high energy electron diffraction; secondary ion mass spectra; semiconductor doping; semiconductor growth; semiconductor heterojunctions; silicon; MBE growth; molecular beam epitaxy growth; heterostructures; incongruent evaporation; carrier concentrations; carrier mobilities; photoluminescence spectra; doping; solid source mbe; solid source molecular beam epitaxy; hall effect; SIMS; RHEED; 400 to 500 c; 10 k; 77 k; 300 k; InP:Be-GaInAs; InP; InP:Si-GaInAs

The incongruent evaporation of GaP source material using a conventional effusion cell equipped with a PBN scavenger at the orifice is demonstrated as a simple and cost-effective way to generate a pure P2 molecular beam, suitable for the growth of InP layers in a solid-source MBE system. Low residual carrier concentrations in combination with high mobilities as well as narrow and intense photoluminescence spectra were achieved. While some arsenic incorporation from the growth environment was observed, gallium incorporation is limited to below 0.1% of the group-III lattice sites. n- and p-doping using Si and Be has been investigated. Successful growth of InP/GaInAs heterostructures indicates that the use of the GaP source technique is a viable way for growing AlGaInAs/InP device structures by solid source MBE.