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Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP

: Biermann, K.; Hase, A.; Kunzel, H.


Journal of Crystal Growth 201-202 (1999), pp.36-39
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <10, 1998, Cannes>
Conference Paper, Journal Article
Fraunhofer HHI ()
aluminium compounds; crystal structure; gallium arsenide; iii-v semiconductors; light interferometry; molecular beam epitaxial growth; photoluminescence; process control; pyrometers; semiconductor epitaxial layers; semiconductor growth; spectral line breadth; spectral methods of temperature measurement; temperature control; x-ray diffraction; optical pyrometry; in situ growth control; MBE; molecular beam epitaxy; (Al,Ga)As1-xSbx; pyrometric interferometry; growth temperature control; epitaxial layers; 450 to 520 c; 10 k; (AlGa)(AsSb); InP

Pyrometric interferometry based on a short wavelength, narrow bandwidth optical pyrometer has been developed to control the growth temperature of AlGaAsSb materials grown lattice matched to InP substrates. The achievement of improved growth temperature stability during deposition is verified by narrow X-ray diffraction and 10 K photoluminescence linewidths.