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High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( lambda =1.53 mu m) laser diodes

: Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.


IEEE Lasers and Electro-Optics Society; Optical Society of America -OSA-, Washington/D.C.:
Conference on Lasers and Electro-Optics, CLEO 2000. Technical digest. Postconference edition : May 7 - 12, 2000, the Moscone Convention Center, San Francisco, California
Washington, DC: OSA, 2000 (OSA trends in optics and photonic series 39)
ISBN: 1-557-52634-6
ISBN: 0-7803-5990-9
ISBN: 0-7803-5991-7
Conference on Lasers and Electro-Optics (CLEO) <21, 2000, San Francisco/Calif.>
Conference Paper
Fraunhofer HHI ()
gallium arsenide; iii-v semiconductors; indium compounds; ion implantation; optical fabrication; optical pulse generation; quantum well lasers; high-power picosecond pulse generation; surface implanted laser diodes; masked heavy ion implantation; on-wafer fabrication; short pulse lasers; saturable absorbers; cost-effective technique; high-yield; 1.53 micron; 20 ps; InGaAsP-InP; inp

As already shown by previous studies, heavy ion implantation can produce a saturable absorber region and, when implemented into a laser resonator, enables the generation of short optical pulses in the picosecond regime. Recently, the feasibility of surface (masked) implantation was demonstrated on strained quantum well InGaAs/GaAs lasers. We present on-wafer fabrication of short pulse lasers on the InGaAsP/InP basis with saturable absorbers created with masked heavy ion implantation. We demonstrate that by using this cost-effective technique high-power (>1 W) picosecond pulse generation is achievable.