Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

InP photoreceiver OEICs for high-speed optical transmission systems

: Mekonnen, G.G.; Schlaak, W.; Bach, H.-G.; Engel, T.; Schramm, C.; Umbach, A.

Park, Y.-S. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Optoelectronic integrated circuits IV : 26 - 27 January 2000, San Jose, California
Bellingham/Wash.: SPIE, 2000 (SPIE Proceedings Series 3950)
ISBN: 0-8194-3567-8
Conference "Optoelectronic Integrated Circuits" <2000, San Jose/Calif.>
Conference Paper
Fraunhofer HHI ()
distributed amplifiers; HEMT integrated circuits; iii-v semiconductors; indium compounds; integrated circuit packaging; integrated optoelectronics; modules; optical receivers; p-i-n photodiodes; photodetectors; InP photoreceiver oeics; high-speed optical transmission systems; Gbit/s telecommunication systems; monolithic integration; high-speed performance; small size; broadband photoreceiver oeic; waveguide-integrated gainAs p-i-n photodetector; distributed amplifier; high-electron mobility transistors; heterodyne-measurement setup; packaged; gain ripple; 40 Gbit/s; 1.55 mum; 0.25 mum; 100 GHz; 250 GHz; 40 GHz; inp

Photoreceivers based on InP are becoming increasingly important for 40 Gbit/s telecommunication systems operating at the wavelength of 1.55 mu m. Due to the monolithic integration, they are advantageous in respect of high-speed performance, small size and cost saving in high-frequency packaging. Research groups worldwide are engaged in developing such OEIC's, with varying architectures and types of the components. Our broadband photoreceiver OEIC consists of a waveguide-integrated GaInAs p-i-n photodetector and a distributed amplifier. The 5*20 mu m sized photodetectors, with a responsivity of 0.4 A/W, reveal a 3 dB cut-off frequency of 70 GHz. The electrical distributed amplifier is made of our high-electron mobility transistors. The HEMT devices with gate lengths of 0.25 mu m exhibit cut-off frequencies fT and fmax of up to 100 and 250 GHz, respectively. The integrated photoreceivers are characterized on-after using a heterodyne-measurement setup and finally packaged into modules for system experiments. On recently fabricated wafers, the receivers show a bandwidth of 40 GHz, whereas the amplifiers alone even exhibit values as high as 43 GHz, with gain ripple less than 1 dB.