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High-speed, high-power 1.55 mu m photodetectors

: Umbach, A.; Trommer, D.; Steingrüber, R.; Seeger, A.; Ebert, W.; Unterborsch, G.


Optical and Quantum Electronics 33 (2001), No.7-10, pp.1101-12
ISSN: 0306-8919
ISSN: 1572-817X
Journal Article
Fraunhofer HHI ()
high-speed optical techniques; infrared detectors; microwave photonics; optical frequency conversion; optical planar waveguides; p-i-n photodiodes; photodetectors; high-speed high-power photodetectors; high-power photodetectors; 40 Gbit/s front-ends; bandwidth; optic/millimeterwave-conversion; high bandwidth; high power levels; waveguide-integrated p-i-n diodes; inp; cutoff frequency; monolithic integration; spot size transformer; responsivity; fiber alignment tolerances; linear power behaviour; maximum output voltage swings; 40 Gbit/s; 60 GHz; 50 GHz

High-speed, high-power photodetectors are required in 40 Gbit/s front-ends as well as for optic/millimeterwave-conversion in 60 GHz broadband mobile systems. The demand for a high bandwidth maintained up to high power levels is fulfilled by waveguide-integrated p-i-n diodes on InP. These photodetectors exhibit a cutoff frequency above 50 GHz. By monolithic integration of a spot size transformer a responsivity of 0.7 A/W is achieved and the fiber alignment tolerances are increased by one order of magnitude. Linear power behaviour up to +12 dBm at 50 GHz and maximum output voltage swings of 1 V are demonstrated.