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High performance compound semiconductor devices and integrated circuits for advanced communication, sensor, and imaging applications

: Schlechtweg, M.; Makon, R.E.; Hurm, V.; Driad, R.; Tessmann, A.; Kallfass, I.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.

5th Joint Symposium on Opto- & Micro-electronic Devices and Circuits, SODC 2009 : Beijing, May 9-15, 2009
Beijing, 2009
Joint Symposium on Opto- & Micro-electronic Devices and Circuits (SODC) <5, 2009, Peking>
Conference Paper
Fraunhofer IAF ()
GaAs; InGaAs; InP; mixed signal IC; double heterojunction bipolar transistor (DHBT); distributed amplifier (DA); multiplexer; MUX; demultiplexer; DEMUX; data recovery diode resolution; CDR; millimeter-wave monolithic integrated circuit; metamorphic high electron mobility transistor; MMIC; MHEMT; low-noise amplifier (LNA)

The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs), intended for use in future 100 Gbit/s optical communication systems (Ethernet), as well as millimeter-wave monolithic integrated circuits (MMICs) and modules for application in active and passive high-resolution imaging systems operating beyond 200 GHz. The mixed-signal ICs are manufactured using a state-of-the-art InP double heterojunction bipolar transistor (DHBT) technology. The MMICs are based on an advanced metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. Examples of high-performance circuits from both technologies are presented in this paper.