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MMICs and mixed-signal ICs based on III/V technology for highest frequencies and data rates

: Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.

Frequenz 63 (2009), No.5-6, pp.86-92
ISSN: 0016-1136
ISSN: 2191-6349
Journal Article
Fraunhofer IAF ()
GaAs; InGaAs; InP; MMIC; MHEMT; low noise amplifier; VCO; mixed signal IC; double heterojunction bipolar transistor (DHBT); distributed amplifier; multiplexer; demultiplexer; clock and data recovery

During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave monolithic integrated circuits (MMICs) and modules for application in active and passive high-resolution imaging systems operating beyond 200 GHz as well as mixed-signal monolithic ICs intended for use in 100 Gbit/s optical communication systems (Ethernet). The MMICs are based on an advanced metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. The mixed-signal ICs are manufactured using a state-of-the-art InP double heterojunction bipolar transistor (DHBT) technology. Examples of high-performance circuits from both technologies are presented in this paper.