Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

A 144 GHz power amplifier MMIC with 11dBm output power, 10 dB associated gain and 10 % power-added efficiency

: Kallfass, I.; Pahl, P.; Massler, H.; Leuther, A.; Tessmann, A.; Koch, S.; Zwick, T.


IEEE Microwave Theory and Techniques Society:
IEEE MTT-S 2009, International Microwave Symposium Digest : 7-12 June, Boston Convention & Exhibition Center
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-2804-5
ISBN: 978-1-4244-2803-8
International Microwave Symposium Digest (MTT-S) <2009, Boston>
Conference Paper
Fraunhofer IAF ()
MMIC; millimeter-wave power amplification; millimeter wave FET integrated circuits; mHEMTS; D-band

A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 135 and 155 GHz is presented. The D-band power amplifier, realized in a 100 nm gate length metamorphic high electron mobility transistor technology, employs a three-stage design with four parallel transistors in the output stage. At 144 GHz and under 1-dB gain compression, the amplifier achieves an output power of more than 11 dBm with an associated gain of 10 dB and a high power-added efficiency of 10%. A comparison to state-of-the-art power amplifiers at high millimeter-wave frequencies is given.