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Interfacial design of Cu-based composites prepared by powder metallurgy for heat sink applications

 
: Schubert, T.; Trindade, B.; Weißgärber, T.; Kieback, B.

:

Bergström, L.:
International Symposium on Inorganic Interfacial Engineering 2006 : Stockholm, Sweden, June 20 - 21
Amsterdam: Elsevier, 2008 (Materials science & engineering. A, Structural materials: properties, microstructure and processing 475.2008, Nr.1-2)
pp.39-44
International Symposium on Inorganic Interfacial Engineering <2006, Stockholm>
English
Conference Paper, Journal Article
Fraunhofer IFAM, Institutsteil Pulvermetallurgie und Verbundwerkstoffe Dresden ()
Anwendung; Elektronik; Elektrotechnik; Borcarbid; Chromcarbid; Dotierung=Fremdatomzusatz; elektronisches Bauteil; Grenzfläche; Kühlkörper; Kupfermatrix-Verbundwerkstoff; partikelverstärkter Verbundwerkstoff; Pulvermetallurgie; Siliciumcarbid; Temperaturregelung; Wärmeabfuhr; Wärmeleitfähigkeit; Wärmeleitung

Abstract
Thermal aspects are becoming increasingly important for the reliability of the electronic components due to the continuous progress of the electronic industries. Therefore, the effective thermal management is a key issue for packaging of high performance semiconductors. The ideal material working as heat sink and heat spreader should have a CTE of (4-8) x 10(exp -6) K(exp -1) and a high thermal conductivity. Metal matrix composites offer the possibility to tailor the properties of a metal by adding an appropriate reinforcement phase and to meet the demands in thermal management. Copper/SiC and copper/diamond composites have been produced by powder metallurgy. The major challenge in development of Cu/SiC is the control of the interfacial interactions. Silicon carbide is not stable in copper at the temperature needed for the fabrication of Cu/SiC. It is known that the bonding between diamond and copper is very weak in the Cu/diamond composite. Improvements in bonding strength and thermo-physical properties of the composites have been achieved by*a vapour deposited molybdenum coating on SiC powders to control interface reactions,*using atomized Cu(X) alloys with minor additions of carbide formers, e.g. X = Cr, B, to improve the interfacial bonding in Cu-diamond composites.
Entnommen aus TEMA

: http://publica.fraunhofer.de/documents/N-70997.html