Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier
Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Journal Article
2020Vertical breakdown of GaN on Si due to V-pits
Besendörfer, S.; Meissner, E.; Tajalli, A.; Meneghini, M.; Freitas, J.A.; Derluyn, J.; Medjdoub, F.; Meneghesso, G.; Friedrich, J.; Erlbacher, T.
Journal Article
20191700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region
Ni, W.; Wang, X.; Xiao, H.; Xu, M.; Li, M.; Schlichting, H.; Erlbacher, T.
Conference Paper
20193D mask effects in high NA EUV imaging
Erdmann, A.; Evanschitzky, P.; Bottiglieri, G.; Setten, E. van; Fliervoet, T.
Conference Paper
20193D-Integrated Multi-Sensor Demonstrator System for Environmental Monitoring
Köck, A.; Wimmer-Teubenbacher, R.; Sosada-Ludwikovska, F.; Rohracher, K.; Wachmann, E.; Herold, M.; Welden, T. an; Kim, J.M.; Ali, Z.; Poenninger, A.; Stahl-Offergeld, M.; Hohe, H.-P.; Lorenz, J.; Erlbacher, T.; Dolmans, G.; Offermans, P.; Vandecasteele, M.; Yurchenko, O.; Sicard, O. von; Pohle, R.; Udrea, F.; Falco, C.; Flandre, D.; Bol, D.; Comini, E.; Zappa, D.; Gardner, J.; Cole, M.; Theunis, J.; Peters, J.; Baldwin, A.
Journal Article
2019Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
Weiße, J.; Hauck, M.; Krieger, M.; Bauer, A.J.; Erlbacher, T.
Journal Article
2019Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method
Stockmeier, Ludwig; Kranert, Christian; Fischer, Peter; Epelbaum, Boris; Reimann, Christian; Friedrich, Jochen; Raming, Georg; Miller, Alfred
Journal Article
2019Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects?
Erdmann, A.; Evanschitzky, P.; Mesilhy, H.; Philipsen, V.; Hendrickx, E.; Bauer, M.
Journal Article
2019Bewertung von Bondverbindungen - Möglichkeiten, Normen und Herausforderungen
Dirksen, Daniel
Presentation
2019Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias
Conference Paper
2019A Compact Model Based on Bardeens Transfer Hamiltonian Formalism for Silicon Single Electron Transistors
Klüpfel, Fabian J.
Journal Article
2019Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar; Chen, Ximing; Zhao, Yanli; Li, Chengzhan; Dai, Xiaoping
Conference Paper
2019Comprehensive SPICE Model for Power Inductor Losses
Ehrlich, S.; Joffe, C.; Thielke, H.; Leinfelder, M.; März, M.
Conference Paper
2019Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications
Friedrich, J.; Jung, T.; Trempa, M.; Reimann, C.; Denisov, A.; Muehe, A.
Journal Article
2019Corrigendum to "Particle engulfment dynamics under oscillating crystal growth conditions" [J. Crystal Growth 468 (2017) 24-27]
Tao, Y.; Sorgenfrei, T.; Jauß, T.; Cröll, A.; Reimann, C.; Friedrich, J.; Derby, J.J.
Journal Article
2019Corrosion in PE Systems - Environmental Testing, Corrosion Detection and Protection
Zimmermann, Victoria; Diepgen, Antonia; Bayer, Christoph Friedrich
Presentation
2019Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.
Conference Paper
2019Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
Erlekampf, J.; Kallinger, B.; Weiße, J.; Rommel, M.; Berwian, P.; Friedrich, J.; Erlbacher, T.
Journal Article
2019Depth profiling of ion-implanted 4H-SiC using confocal Raman spectroscopy
Song, Ying; Xu, Zongwei; Liu, Tao; Rommel, Mathias; Wang, Hong; Fang, Fengzhou
Poster
2019Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
Schlichting, H.; Sledziewski, T.; Bauer, A.J.; Erlbacher, T.
Conference Paper
2019Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits
Weisse, Julietta; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias
Conference Paper
2019Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
Kocher, Matthias; Yao, Boteng; Weisse, Julietta; Rommel, Mathias; Xu, Zong Wei; Erlbacher, Tobias; Bauer, Anton J.
Conference Paper
2019Diffusion of phosphorus and boron from Atomic Layer Deposition oxides into silicon
Beljakova, Svetlana; Pichler, Peter; Kalkofen, Bodo; Hübner, René
Journal Article
2019Erlangen - An Important Center of Crystal Growth and Epitaxy. Major Scientific Results and Technological Solutions of the Last Four Decades
Friedrich, J.; Müller, G.
Journal Article
2019Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots
Trempa, M.; Kranert, C.; Kupka, I.; Reimann, C.; Friedrich, J.
Journal Article
2019Feasibility of 4H-SiC p-i-n diode for sensitive temperature measurements between 20.5 K and 802 K
Matthus, C.D.; Benedetto, L. di; Kocher, M.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Erlbacher, T.
Journal Article
2019First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC. A Proof of Concept
Benedetto, L. di; Licciardo, G.D.; Huerner, A.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Conference Paper
2019Fraunhofer IISB erforscht Korrosion
Bayer, Christoph
Journal Article
2019Future Packaging Technologies in Power Electronic Modules
Bayer, Christoph Friedrich
Presentation
2019Future Packaging Technologies in Power Electronic Modules
Bayer, C.F.
Presentation
2019Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy
Lukin, G.; Schneider, T.; Förste, M.; Barchuk, M.; Schimpf, C.; Röder, C.; Zimmermann, F.; Niederschlag, E.; Pätzold, O.; Beyer, F.C.; Rafaja, D.; Stelter, M.
Journal Article
2019Hybrid Cooling Towers in a Free-Cooling Application: Modeling and Field Measurement Verification
Puls, P.; Lange, C.; Öchsner, R.
Journal Article, Conference Paper
2019A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices
Schriefer, T.; Hofmann, M.
Journal Article
2019Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
Albrecht, M.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2019In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid-Liquid-Gas Interface
Hutzler, A.; Fritsch, B.; Jank, M.P.M.; Branscheid, R.; Martens, R.C.; Spiecker, E.; März, M.
Journal Article
2019Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors
Schlichting, Holger; Kocher, Matthias; Weiße, Julietta; Erlbacher, Tobias; Bauer, Anton J.
Poster
2019Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits
Amat, Esteve; Klüpfel, Fabian; Bausells, Joan; Perez-Murano, Francesc
Journal Article
2019Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance
Klüpfel, Fabian J.
Journal Article
2019Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by using PL scanning
Kocher, Matthias; Schlichting, Holger; Kallinger, Birgit; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias
Poster
2019Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes
Rusch, Oleg; Moult, Jonathan; Erlbacher, Tobias
Conference Paper
2019Innovative Technologien für intelligente dezentrale Energiesysteme
: März, Martin; Öchsner, Richard
Book
2019Integrated Passive Devices and Switching Circuit Design for a 3D DC/DC Converter up to 60 V
Saponara, S.; Ciarpi, G.; Erlbacher, Tobias; Rattmann, Gudrun
Journal Article
2019Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy
Hutzler, Andreas; Matthus, Christian D.; Dolle, Christian; Rommel, Mathias; Jank, Michael P.M.; Spiecker, Erdmann; Frey, Lothar
Journal Article
2019Laser Writing of Scalable Single Color Centers in Silicon Carbide
Chen, Y.-C.; Salter, P.S.; Niethammer, M.; Widmann, M.; Kaiser, F.; Nagy, R.; Morioka, N.; Babin, C.; Erlekampf, J.; Berwian, P.; Booth, M.J.; Wrachtrup, J.
Journal Article
2019Lifetime engineering in 4H-SiC materials and devices
Rommel, Mathias; Erlekampf, Jürgen; Kallinger, Birgit; Weiße, Julietta; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias
Presentation
2019Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC
Hellinger, Carsten; Rusch, Oleg; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias
Poster
2019Luminescent properties of Ce3+ doped LiLuP4O12 tetraphosphate under synchrotron radiation excitation
Zorenko, T.; Paprocki, K.; Levchuk, I.; Batentschuk, M.; Epelbaum, B.; Fedorov, A.; Zorenko, Y.
Journal Article
2019Mask absorber development to enable next-generation EUVL
Philipsen, V.; Luong, K.V.; Opsomer, K.; Souriau, L.; Rip, J.; Detavernier, C.; Erdmann, A.; Evanschitzky, P.; Laubis, C.; Honicke, P.; Soltwisch, V.; Hendrickx, E.
Conference Paper
2019Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices
Besendörfer, S.; Meissner, E.; Lesnik, A.; Friedrich, J.; Dadgar, A.; Erlbacher, T.
Journal Article
2019NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration
Ahopelto, J.; Ardila, G.; Baldi, L.; Balestra, F.; Belot, D.; Fagas, G.; Gendt, S. de; Demarchi, D.; Fernandez-Bolaños, M.; Holden, D.; Ionescu, A.M.; Meneghesso, G.; Mocuta, A.; Pfeffer, M.; Popp, R.M.; Sangiorgi, E.; Sotomayor Torres, C.M.
Journal Article
2019Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate
Kim, Seongjun; Kim, Hong-Ki; Lim, Minwho; Jeong, Seonghoon; Kang, Min-Jae; Kang, Min-Sik; Lee, Nam-Suk; Coung, Tran Viet; Kim, Hyunsoo; Erlbacher, Tobias; Bauer, Anton J.; Shin, Hoon-Kyu
Journal Article
2019On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics
Rattmann, Gudrun; Pichler, Peter; Erlbacher, Tobias
Journal Article
2019On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
Weisse, Julietta; Hauck, Martin; Sledziewski, Tomasz; Krieger, Michael; Bauer, Anton J.; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias
Conference Paper
2019Optimierung und Qualifizierung eines Bondprozesses. Tests und Analyseverfahren
Dirksen, Daniel
Presentation
2019Optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics Packaging via Design of Experiments
Yu, Z.; Wang, S.; Letz, S.; Bayer, C.F.; Häußler, F.; Schletz, A.; Suganuma, K.
Conference Paper
2019Parylene Coatings in Power Electronic Modules
Diepgen, A.; Zimmermann, V.; Bayer, C.F.; Zhou, Y.; Forster, C.; Wilbers, P.; Leib, J.; Schletz, A.; Virtanen, S.; März, M.
Presentation