Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2021Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN
Wolff, Niklas; Fichter, Simon; Haas, Benedikt; Islam, Md Redwanul; Niekiel, Florian; Kessel, Maximilian; Ambacher, Oliver; Koch, Christoph; Wagner, Bernhard; Lofink, Fabian; Kienle, Lorenz
Journal Article
2021A compact 281-319 GHz low-power downconverter MMIC for superheterodyne communication receivers
Grötsch, Christopher M.; Dan, Iulia; John, Laurenz; Wagner, Sandrine; Kallfass, Ingmar
Journal Article
2021Comparison of active dual-gate and passive mixers for terahertz applications
Grötsch, Christopher M.; Dan, Iulia; John, Laurenz; Wagner, Sandrine; Kallfass, Ingmar
Journal Article
2021Design of low-resistance and area-efficient GaN-HEMTs for low-voltage power applications
Reiner, Richard; Benkhelifa, Fouad; Mönch, Stefan; Basler, Michael; Waltereit, Patrick; Mikulla, Michael; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2021Development and evaluation of a GaAs based 300 GHz module
Dyck, Alexander
: Backofen, Rolf; Ambacher, Oliver; Kallfass, Ingmar
Dissertation
2021Efficiency and Linearity of Digital "Class-C Like" Transmitters
Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; Rijs, Fred van; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; Vreede, Leo C.N. de
Conference Paper
2021Fabrication of n-Type doped v-shaped structures on (100) diamond
Schreyvogel, Christoph; Temgoua, Solange; Giese, Christian; Cimalla, Volker; Barjon, Julien; Nebel, Christoph E.
Journal Article
2021First Demonstration of Distributed Amplifier MMICs with more than 300-GHz Bandwidth
Thome, Fabian; Leuther, Arnulf
Journal Article
2021First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N
Urban, D.F.; Ambacher, Oliver; Elsässer, C.
Journal Article
2021Fraunhofer-Institut für Angewandte Festkörperphysik. Jahresbericht 2020/2021
 
Annual Report
2021Full H-Band LNA in 35 nm mHEMT Technology with Constant Current Bias Control
Weber, Rainer; Leuther, Arnulf; Lozar, Roger; Massler, Hermann
Conference Paper
2021Growth and fabrication of quasivertical current aperture vertical electron transistor structures
Doering, Philipp; Driad, Rachid; Leone, Stefano; Müller, Stefan; Waltereit, Patrick; Kirste, Lutz; Polyakov, Vladimir M.; Mikulla, Michael; Ambacher, Oliver
Journal Article
2021Growth defects in heteroepitaxial diamond
Lebedev, Vadim; Engels, Jan; Kustermann, Jan; Weippert, Jürgen; Cimalla, Volker; Kirste, Lutz; Giese, Christian; Quellmalz, Patricia; Graff, Andreas; Meyer, Frank; Höfer, Markus; Sittinger, Volker
Journal Article
2021H-Band quartz-silicon leaky-wave lens with air-bridge interconnect to GaAs front-end
Campo, Marta Arias; Holc, Katarzyna; Weber, Rainer; Martino, Carmine de; Spirito, Marco; Leuther, Arnulf; Bruni, Simona; Llombart, Nuria
Journal Article
2021High-Q AlGaN/GaN Varactors for Mobile Communication Systems
Amirpour, Raul
: Ambacher, Oliver
Dissertation
2021Impact of nitrogen, boron and phosphorus impurities on the electronic structure of diamond probed by x-ray spectroscopies
Choudhury, Sneha; Golnak, Ronny; Schulz, Christian; Lieutenant, Klaus; Tranchant, Nicolas; Arnault, Jean-Charles; Pinault-Thaury, Marie-Amandine; Jomard, Francois; Knittel, Peter; Petit, Tristan
Journal Article
2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Manz, Christian; Leone, Stefano; Kirste, Lutz; Ligl, Jana; Frei, Kathrin; Fuchs, Theodor; Prescher, Mario; Waltereit, Patrick; Verheijen, Marcel A.; Graff, Andreas; Simon-Najasek, Michél; Altmann, Frank; Fiederle, Michael; Ambacher, Oliver
Journal Article
2021InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate
Leuther, Arnulf; John, Laurenz; Iannucci, Robert; Christoph, T; Aidam, Rolf; Merkle, Thomas; Tessmann, Axel
Conference Paper
2021Inversion channel MOSFET on heteroepitaxially grown free-standing diamond
Zhang, Xufang; Matsumoto, Tsubasa; Nakano, Yuta; Noguchi, Hitoshi; Kato, Hiromitsu; Makino, Toshiharu; Takeuchi, Daisuke; Ogura, Masahiko; Yamasaki, Satoshi; Nebel, Christoph E.; Inokuma, Takao; Tokuda, Norio
Journal Article
2021Metal organic chemical vapour deposition regrown large area GaN-on-GaN current aperture vertical electron transistors with high current capability
Doering, Philipp; Driad, Rachid; Reiner, Richard; Waltereit, Patrick; Mikulla, Michael
Journal Article
2021Method and apparatus for the expansion of graphite
Roscher, Sarah
Patent
2021Microwave quantum optics as a direct probe of the Overhauser field in a quantum dot circuit quantum electrodynamics device
Jin, Pei-Quing; Jeske, Jan; Greentree, Andrew D.; Cole, Jared H.
Journal Article
2021Millimeter-Wave Radar Sensor for Automated Tomographic Imaging of Composite Materials in a Manufacturing Environment
Meier, Dominik; Zech, Christian; Baumann, Benjamin; Gashi, Bersant; Malzacher, Matthias; Schlechtweg, Michael; Kühn, Jutta; Rösch, Markus; Reindl, Leonhard M.
Journal Article
2021Monolithic integrated AlGaN/GaN power converter topologies on high-voltage AlN/GaN superlattice buffer
Mönch, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2021An overview of clutter mitigation methods for tomographic material inspection
Meier, Dominik; Gashi, Bersant; Zech, Christian; Baumann, Benjamin; Link, Torsten; Schlechtweg, Michael; Kühn, Jutta; Rösch, Markus; Reindl, Leonhard M.
Journal Article
2021PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Benkhelifa, Fouad; Hückelmheim, Jan; Meder, Dirk; Zink, Martin; Kaden, Thomas; Noll, Stefan; Mansfeld, Sebastian; Mingirulli, Nicola; Quay, Rüdiger; Kallfass, Ingmar
Journal Article
2021Quality assessment of in situ plasma-etched diamond surfaces for chemical vapor deposition overgrowth
Langer, Julia; Cimalla, Volker; Prescher, Mario; Ligl, Jana; Tegetmeyer, Björn; Schreyvogel, Christoph; Ambacher, Oliver
Journal Article
2021Reliability and failure analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress
Dammann, Michael; Baeumler, Martina; Kemmer, Tobias; Konstanzer, Helmer; Brueckner, Peter; Krause, Sebastian; Graff, Andreas; Simon-Najasek, Michél
Conference Paper
2021Stability and residual stresses of sputtered wurtzite AlScN thin films
Österlund, Elmeri; Ross, Glenn; Caro, Miguel; Paulasto-Kröckel, Mervi; Hollmann, Andreas; Klaus, Manuela; Meixner, Matthias; Genzel, Christoph; Koppinen, Panu; Pensala, Tuomas; Zukauskaite, Agne; Trebala, Michael
Journal Article
2021A Three Stage Gain Cell Topology with an Active Ultra-Wideband Input Matching in H-Band
Gatzastras, Athanasios; Massler, Hermann; Leuther, Arnulf; Chartier, Sebastian; Kallfass, Ingmar
Conference Paper
2021A three-phase GaN-on-Si inverter IC for low-voltage motor drives
Mönch, Stefan; Reiner, Richard; Benkhelifa, Fouad; Basler, Michael; Waltereit, Patrick; Quay, Rüdiger
Conference Paper
2021Two-tone intermodulation performance of a 300 GHz power amplifier MMIC
Schoch, Benjamin; Tessmann, Axel; Leuther, Arnulf; Szriftgiser, Pascal; Ducournau, Guillaume; Kallfass, Ingmar
Conference Paper
2020100 Gb/s Real-Time Transmission over a THz Wireless Fiber Extender using a Digital-Coherent Optical Modem
Castro, Carlos; Elschner, Robert; Merkle, Thomas; Schubert, Colja; Freund, Ronald
Conference Paper
2020A 600 V p-GaN gate HEMT with intrinsic freewheeling schottky-diode in a GaN power IC with bootstrapped driver and sensors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2020A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2020Amplification by stimulated emission of nitrogen vacancy centres in a diamond-loaded fibre cavity
Nair, Sarath Raman; Rogers, Lachlan J.; Vidal, Xavier; Roberts, Reece P.; Abe, Hiroshi; Ohshima, Takeshi; Yatsui, Takashi; Greentree, Andrew D.; Jeske, Jan; Volz, Thomas
Report
2020Amplification by stimulated emission of nitrogen-vacancy centres in a diamond-loaded fibre cavity
Nair, Sarath Raman; Rogers, Lachlan J.; Vidal, Xavier; Roberts, Reece P.; Abe, Hiroshi; Ohshima, Takeshi; Yatsiu, Takashi; Greentree, Andrew D.; Jeske, Jan; Volz, Thomas
Journal Article
2020Aufbaukonzept für HF-Systeme
Ihle, Martin; Ziesche, Steffen; Zech, Christian; Baumann, Benjamin
Patent
2020Broadband 300-GHz power amplifier MMICs in InGaAs mHEMT technology
John, Laurenz; Tessmann, Axel; Leuther, Arnulf; Neininger, Philipp; Merkle, Thomas; Zwick, Thomas
Journal Article
2020Broadband and high-gain 400-GHz InGaAs mHEMT medium-power amplifier S-MMIC
Gashi, Bersant; John, Laurenz; Meier, D.; Rösch, Markus; Tessmann, Axel; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2020Broadband High-Efficiency Power Amplifiers in 150 nm AlGaN/GaN Technology at Ka-Band
Samis, Stanislav; Friesicke, Christian; Maier, Thomas; Quay, Rüdiger; Jacob, A.F.
Conference Paper
2020Clutter mitigation based of adaptive singular value decomposition in tomographic radar images for material inspection
Meier, Dominik; Gashi, Bersant; Link, Torsten; Schwarze, Thomas; Zech, Christian; Baumann, Benjamin; Schlechtweg, Michael; Kühn, Jutta; Rösch, Markus; Reindl, Leonhard M.
Conference Paper
2020Considerations for Through-Substrate-Via Placement in InGaAs mHEMT THz Circuits Using Thin-Film Wiring
John, Laurenz; Neininger, Philipp; Tessmann, Axel; Leuther, Arnulf; Zwick, Thomas
Conference Paper
2020Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh
Journal Article
2020Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN
Vuong, Phuong; Sundaram, Suresh; Mballo, Adama; Patriarche, Gilles; Leone, Stefano; Benkhelifa, Fouad; Karrakchou, Soufiane; Moudakir, Tarik; Gautier, Simon; Voss, Paul L.; Salvestrini, Jean-Paul; Ougazzaden, A.
Journal Article
2020Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente
Manz, Christian
: Bast, H.; Ambacher, Oliver; Fiederle, M.
Dissertation
2020Determining Elastic Constants of AlScN Films on Silicon Substrates by Laser Ultrasonics
Rogall, Olga; Feil, Niclas M.; Ding, Anli; Mayer, Elena; Pupyrev, Pavel D.; Lomonosov, Alexey M.; Zukauskaite, Agne; Ambacher, Oliver; Mayer, Andreas P.
Conference Paper
2020Development and evaluation of a GaAs based 300 GHz module
Dyck, Alexander
: Ambacher, Oliver (Gutachter); Kallfass, Ingmar (Gutachter)
Dissertation
2020Development of All-Diamond Scanning Probes Based on Faraday Cage Angled Etching Techniques
Giese, Christian; Quellmalz, Patricia; Knittel, Peter
Journal Article
2020Diamond for Quantum Applications. Part 1
: Nebel, Christoph E.; Aharnovich, Igor; Mizuochi, Norikazu; Hatano, Mutsuko
Book
2020E-band balanced broadband driver amplifier MMIC with 1.8 THz gain-bandwidth product
Schoch, Benjamin; Tessmann, Axel; Wagner, Sandrine; Kallfass, Ingmar
Conference Paper
2020Elektroakustischer Resonator und Verfahren zu dessen Herstellung
Lebedev, Vadim
Patent
2020Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al₀.₇₇Sc₀.₂₃N (1120) thin films
Ding, Anli; Kirste, Lutz; Lu, Yuan; Driad, Rachid; Kurz, Nicolas; Lebedev, Vadim; Christoph, Tim; Feil, Niclas M.; Lozar, Roger; Metzger, Thomas; Ambacher, Oliver; Zukauskaite, Agne
Journal Article
2020Evidence of strong electron-phonon interaction in a GaN-based quantum cascade emitter
Hofstetter, Daniel; Beck, Hans; Epler, John E.; Kirste, Lutz; Bour, David P.
Journal Article
2020Experimental demonstrations of high-capacity THz-wireless transmission systems for beyond 5G
Castro, Carlos; Elschner, Robert; Merkle, Thomas; Schubert, Colja; Freund, Ronald
Journal Article
2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver
Journal Article
2020Extreme temperature modeling of AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Kargazzi, Saleh; Schwantuschke, Dirk; Gneiting, Thomas; Senesky, Debbie G.; Khandelwal, Sourabh
Journal Article