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Advances in Epitaxial GaInP/GaAs/Si Triple Junction Solar Cells

: Feifel, M.; Lackner, D.; Ohlmann, J.; Volz, K.; Hannappel, T.; Benick, J.; Hermle, M.; Dimroth, F.

Postprint urn:nbn:de:0011-n-6248949 (462 KByte PDF)
MD5 Fingerprint: f2aa325ac3a3e0dcabf7caf5a53097db
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Erstellt am: 26.2.2021

Präsentation urn:nbn:de:0011-n-624894-14 (1.5 MByte PDF)
MD5 Fingerprint: e23b1dd1376bad1df1acbd459e11ad2b
Erstellt am: 27.2.2021

Institute of Electrical and Electronics Engineers -IEEE-:
47th IEEE Photovoltaic Specialists Conference, PVSC 2020 : 15-21 June 2020, Calgary, Canada, Virtual Meeting
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6116-7 (Print)
ISBN: 978-1-7281-6115-0
Photovoltaic Specialists Conference (PVSC) <47, 2020, Online>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; III-V- und Konzentrator-Photovoltaik; Dotierung und Diffusion; III-V Epitaxie und Solarzellen

Epitaxial III-V on silicon multi-junction solar cells allow to increase the conversion efficiency of single-junction silicon devices. We report progress on the development of high-efficiency GaInP/GaAs/Si triple-junction devices over the last two years. The AM1.5g conversion efficiency has been increased from 19.7% to 22.3%, 24.3%, and finally a value of 25.9% could be achieved. The improvement was enabled by a reduction of nucleation-related crystal defects in the silicon to gallium phosphide transition and a reduction of parasitic absorption within the metamorphic GaAsP buffer structure which was limiting the current in the silicon subcell. By increasing the bandgaps in the graded buffer structure, a ∼2x reduction of the threading dislocation density was observed and the short-circuit current density increased by 22% relative. A majority barrier was identified and could be suppressed to obtain a new record conversion efficiency of 25.9% with an open-circuit voltage of 2.647 V, a short-circuit current density of 12.2 mA/cm 2 and a fill factor of 80.2%.