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Kerfless Wafering Approach with Si and Ge Templates for Si, Ge and III-V Epitaxy

 
: Weiss, C.; Schreiber, W.; Drießen, M.; Sorgenfrei, R.; Liu, T.; Ohnemus, M.; Janz, S.

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Volltext urn:nbn:de:0011-n-6181729 (947 KByte PDF)
MD5 Fingerprint: 758a12030fbccdc377badd78076efcf2
Erstellt am: 11.12.2020

Poster urn:nbn:de:0011-n-618172-19 (1.0 MByte PDF)
MD5 Fingerprint: bc0af755f45f59912be7ad14c2b3e0bf
Erstellt am: 16.2.2021


Pearsall, Nicola (Editor):
37th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2020 : 07-11 September 2020, Online Conference
München: WIP, 2020
ISBN: 3-936338-73-6
S.444-448
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <37, 2020, Online>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; epitaxy; lifetime; Porous Germanium; porous silicon; Silicium-Photovoltaik; Epitaxie; Si-Folien und SiC-Abscheidungen

Abstract
We work on the transfer from CZ wafers to epitaxially grown Si and Ge wafers on reusable substrates with a porous detachment layer (“kerfless wafering”) to reduce material and energy consumption. We report on our progress of applying the kerfless wafering approach to Si and to Ge wafers. For Si, we develop templates and epitaxially grown wafers (SiEpiWafers) since many years in our self-made CVD reactor (“RTCVD”) and are now bringing their quality to the next level with a new, microelectronic CVD reactor (“PEpi”) which allows us to grow 6” and 156x156 mm² (M0) epitaxial Si wafers with adjustable thickness and doping level (n- and p-type). In the first test runs, we achieved as-grown lifetimes up to 840 µs and a total thickness variation of ~ 10%. For Ge, we were successful in developing and understanding a porous layer stack leading to 4” detachable Ge templates for future Ge or III-V epitaxial growth.

: http://publica.fraunhofer.de/dokumente/N-618172.html