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Silicon-Based Monolithic Triple-Junction Solar Cells with Conversion Efficiency >34%

: Müller, R.; Schygulla, P.; Lackner, D.; Höhn, O.; Hauser, H.; Richter, A.; Fell, A.; Bläsi, B.; Predan, F.; Benick, J.; Hermle, M.; Dimroth, F.; Glunz, S.

Volltext urn:nbn:de:0011-n-6181667 (1.1 MByte PDF)
MD5 Fingerprint: 6597658fd4b4179b180732279b2d6df7
Erstellt am: 16.12.2020

Pearsall, Nicola (Editor):
37th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2020 : 07-11 September 2020, Online Conference
München: WIP, 2020
ISBN: 3-936338-73-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <37, 2020, Online>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Multijunction Solar Cell; Silicium-Photovoltaik; III-V- und Konzentrator-Photovoltaik; Herstellung und Analyse von hocheffizienten Si-Solarzellen; III-V Epitaxie und Solarzellen

Triple-junction solar cells with top cells made from III-V compound semiconductors on a silicon bottom cell show conversion efficiencies beyond the theoretical limit of single-junction devices, so this is one of the promising technologies for terrestrial photovoltaics. In this work, a III-V//Si tandem device with 34.5% efficiency is presented and further developments are discussed. A detailed investigation of the silicon bottom cell revealed, that with optimum wafer resistivity (~1 Ω cm) and low-temperature passivation of the cell perimeter, the perimeter losses can be reduced to ~0.2%abs. This corresponds to an efficiency gain of up to 0.8%abs for the current devices.