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34.1 % Efficient GaInP/AlGaAs//Si Tandem Cell

: Dimroth, F.; Schygulla, P.; Lackner, D.; Müller, R.; Benick, J.; Beutel, P.; Predan, F.; Höhn, O.; Hauser, H.; Siefer, G.; Hermle, M.; Glunz, S.

Postprint urn:nbn:de:0011-n-5994860 (387 KByte PDF)
MD5 Fingerprint: 4bf4511e83f4aad800a1f759969dee83
Erstellt am: 18.8.2020

Institute of Electrical and Electronics Engineers -IEEE-:
47th IEEE Photovoltaic Specialists Conference, PVSC 2020 : 15-21 June 2020, Calgary, Canada, Virtual Meeting
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6116-7 (Print)
ISBN: 978-1-7281-6115-0
Photovoltaic Specialists Conference (PVSC) <47, 2020, Online>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; III-V- und Konzentrator-Photovoltaik; Neuartige Photovoltaik-Technologie

III-V/Si tandem solar cells are investigated as a promising solution to increase the power output of photovoltaic modules under terrestrial sunlight conditions. Over the last years, we have developed a wafer-bonded GaInP/AlGaAs//Si triple-junction solar cell with a recently calibrated conversion efficiency of 34.1% under AM1.5g. This is the highest efficiency of any Si-based 2-terminal tandem device and it shows the potential of this technology to reach significantly higher performances than any single-junction devices.