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Conductive Highly Filled Suspensions for an Electrochemical Dispensing Approach to Pattern Full-Area Thin Metal Layers by Physical Vapour Deposition

: Gensowski, Katharina; Tepner, Sebastian; Schweigert, Sebastian; Clement, Florian; Kamp, Mathias; Pospischil, Maximilian; Bartsch, Jonas

Volltext urn:nbn:de:0011-n-5933888 (2.9 MByte PDF)
MD5 Fingerprint: 4979029f8e15beafa8f7228e4a30f50f
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Erstellt am: 1.7.2020

Scientific Reports 10 (2020), Art. 7409, 10 S.
ISSN: 2045-2322
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
0324009A; KAluS 50
Kostengünstige Aluminium-Strukturierung bis 50 µm für Silicium-Solarzellen und ähnliche Anwendungsgebiete
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Metallisierung und Strukturierung

This paper presents a systematic approach for the development of highly filled suspensions used for an electrochemical dispensing approach. Electrochemical dispensing is an alternative structuring process to locally pattern PVD full-area thin metal layers with the goal to create contacts on solar cells or circuit boards by anodic metal dissolution. Achieving a narrow patterned line width requires a dispensing paste with a high yield stress, a small particle size distribution and a good electrical conductivity. Therefore this work focuses on the formulation and characterization of dispensing pastes in terms of their rheological and electrical properties and their particle size distribution. Furthermore, the printing performance is evaluated in dispensing experiments. In this study, samples with a yield stress above 5000 Pa and an average particle size below 0.4 µm were produced, resulting in dispensed line widths below 100 µm with a high aspect ratio above 0.6. The lack of electrical conductivity was solved by adding KCl solution to the paste, which will add to the ionic conductivity of the NaNO3 basis paste formulation. With this approach, printed line widths down to 115 µm and etched line widths below 90 µm at high aspect ratio were achieved on 50 nm aluminum layers.