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Re-evaluation of the SRH-Parameters for the FeGa Defect

: Post, R.; Niewelt, T.; Yang, W.; Macdonald, D.; Kwapil, W.; Schubert, M.C.

Postprint urn:nbn:de:0011-n-5781921 (457 KByte PDF)
MD5 Fingerprint: 85258a1023f7426c90040265851142a1
Copyright AIP
Erstellt am: 4.3.2020

Poortmans, J. ; American Institute of Physics -AIP-, New York:
SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium
New York, N.Y.: AIP Press, 2019 (AIP Conference Proceedings 2147)
ISBN: 978-0-7354-1892-9
Art. 020012, 8 S.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <9, 2019, Leuven>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; imaging; silicon; photoluminescence; parameters

In this work the existing SRH parametrizations for the FeGa defect are re-evaluated by a deliberately iron contaminated sample set of varied doping densities. The evolution of the cross-over point is analyzed for this aim, due to its characteristic dependency on the defect parameters of the metastable iron states. It can give insight into the defect parameter, whilst being independent of most factors usually limiting evaluations precision. The proposed parameter adjustment provides an improved description of the measurement data compared to the literature parametrizations.