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Study on the Interfacial Oxide in Passivating Contacts

: Polzin, J.-I.; Feldmann, F.; Steinhauser, B.; Hermle, M.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-5781905 (910 KByte PDF)
MD5 Fingerprint: 91a96f33e2cff46e376c5b5710201bf4
Copyright AIP
Erstellt am: 7.3.2020

Poortmans, J. ; American Institute of Physics -AIP-, New York:
SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium
New York, N.Y.: AIP Press, 2019 (AIP Conference Proceedings 2147)
ISBN: 978-0-7354-1892-9
Art. 040016, 8 S.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <9, 2019, Leuven>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

This paper discusses how differently grown ultra-thin interfacial oxide of poly-Si based passivating contacts correspond to high-temperature annealing as well as its sensitivity to hydrogenation. It will be shown on symmetrical lifetime samples that tunnel oxide passivating contacts (TOPCon) featuring thermally grown interfacial oxide layer allow a higher optimum annealing temperature than those with thin wet-chemically grown oxides. These TOPCon structures can yield an excellent passivation quality with up to 741 mV iVoc and 88% iFF. Moreover, TOPCon samples annealed at low temperatures benefit more strongly from a subsequent hydrogenation process.