Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Influence of Interfacial Oxides at the TCO/doped Si Thin Film Contacts on the Charge Carrier Transport of Passivating Contacts

: Meßmer, Christoph Alexander; Bivour, Martin; Luderer, Christoph; Tutsch, Leonard; Schön, Jonas; Hermle, Martin

Postprint urn:nbn:de:0011-n-5781429 (1.3 MByte PDF)
MD5 Fingerprint: bf796914a2179bcf072457aade6a6e1e
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 25.2.2020

IEEE Journal of Photovoltaics 10 (2020), Nr.2, S.343-350
ISSN: 2156-3381
ISSN: 2156-3403
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727529; DISC
Double side contacted cells with innovative carrier-selective contacts
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
0324141; SELEKTIV
Selektive Kontaktsysteme für hocheffiziente Siliziumsolarzellen; Teilvorhaben: Prozesse und Solarzellen
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Senaurus TCAD; silicon heterojunction; simulation; TOPCon; trap-assisted tunneling; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Si-Solarzellen; tunneling

Minimizing transport losses in novel solar cells concepts is often linked to improvements at the TCO / doped silicon contact. A detailed understanding of the determining factors for an efficient transport at this heterojunction is essential, such as work function matching and efficient tunneling transport. We analyze the different TCO contact parameters experimentally and by numerical device simulations. We show that work function matching by using a proper interlayer (e.g. WOx) can be an effective means to improve the fill factor of silicon heterojunction solar cells. However, we showcase that an improved work function matching achieved by changing the doping of a TCO (ITO) interlayer can be superimposed by a less efficient tunneling transport, e.g. due to an interfacial oxide. Furthermore, we show that for n-TOPCon an unintentionally grown oxide at the TCO/poly-Si contact could be a possible explanation for recently observed transport losses.