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Contact Resistivity of the TCO/A-Si:H/C-Si Heterojunction

: Luderer, C.; Messmer, C.; Hermle, M.; Bivour, M.

Volltext urn:nbn:de:0011-n-5654916 (384 KByte PDF)
MD5 Fingerprint: 29fac2336b19d43c62c59a6ab324518e
Erstellt am: 26.11.2019

36th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2019 : Proceedings of the international conference held in Marseille, France, 09-13 September 2019
Marseille, 2019
ISBN: 3-936338-60-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <36, 2019, Marseille>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Si-Solarzellen; resistivity; heterojunction; related losses

Transport related losses in the heterojunction stack are a limitation on the power output of silicon heterojunction solar cells. We present contact resistivity measurements of the electron and hole contact of our silicon heterojunctions, which enable fill factors above 80 % on cell level. Our systematic investigation of the influence of different layers reveals, that the intrinsic a-Si:H and the ITO layer significantly increases transport losses, especially for the hole contact. Experimental results are supported by good correlation with numerical device simulation.