Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Development of Germanium-Based Wafer-Bonded Four-Junction Solar Cells

: Höhn, Oliver; Niemeyer, Markus; Weiss, Charlotte; Lackner, David; Predan, Felix; Franke, Alexander; Beutel, Paul; Schachtner, Michael; Müller, Ralph; Siefer, Gerald; Janz, Stefan; Dimroth, Frank

Postprint urn:nbn:de:0011-n-5649806 (1.7 MByte PDF)
MD5 Fingerprint: 265f5383e32ae93f7b1b2922cbbc102b
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 12.11.2019

IEEE Journal of Photovoltaics 9 (2019), Nr.6, S.1625-1630
ISSN: 2156-3381
ISSN: 2156-3403
European Commission EC
H2020-Low Carbon Energy - Developing the next generation technologies of renewable electricity and heating/cooling; 640873; CPVMatch
Concentrating Photovoltaic modules using advanced technologies and cells for highest efficiencies
European Commission EC
H2020-Industrial Leadership - COMPET - Bottom-up space technologies at low TRL; 687336; SiLaSpaCe
Si based Layer Stacks for Rear-Side Passivation and Enhanced Reflection of GaInP/GaInAs/Ge Triple-Junction Space Solar Cells
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen

Multijunction solar cells with four junctions are expected to be the next-generation technology for both space and concentrator photovoltaic applications. Most commercial triple junction solar cells are today grown on germanium, which also forms the bottom subcell. Extending this concept to four junctions with an additional∼1-eV subcell was proven to be challenging. We investigate a new cell concept, which uses direct wafer bonding to combine a metamorphic GaInAs/Ge bottom tandem solar cell with a GaInP/AlGaAs top tandem on GaAs resulting in a monolithic four-junction cell on germanium. This article summarizes results of the cell developments, which have been resulting in a four-junction concentrator cell with 42% efficiency. We implemented a new passivated Ge backside technology to enhance the current generation in the Ge junction, and we propose realistic steps to realize solar cells with 45% efficiency using this cell architecture.