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Measurement of the Non-radiative Minority Recombination Lifetime and the Effective Radiative Recombination Coefficient in GaAs

: Niemeyer, Markus; Kleinschmidt, Peter; Walker, Alexandre W.; Mundt, Laura; Timm, C.; Lang, Robin; Hannappel, Thomas; Lackner, David

Volltext urn:nbn:de:0011-n-5495587 (1.3 MByte PDF)
MD5 Fingerprint: a7fc6ba38672d967f725d96764afb946
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Erstellt am: 3.3.2020

AIP Advances 9 (2019), Nr.4, Art. 045034, 8 S.
ISSN: 2158-3226
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
325750; HekMod4
Hocheffizientes Konzentratormodul mit GaSb Vierfachsolarzelle
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
50RN1501; MatProZell
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
III-V Epitaxie und Materialentwicklung; Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen

The combination of time-resolved (TR) and power-dependent relative (PDR) photoluminescence (PL) measurements reveals the possibility of separating the radiative and non-radiative minority carrier lifetimes and measuring the sample-dependent effective radiative recombination coefficient in direct bandgap semiconductors. To demonstrate the method, measurements on 2 μm thick p-type GaAs double-hetero structures were conducted for various doping concentrations in the range of 5x1016 and 1x1018 cm-3. With a photon recycling factor of 0.76 ± 0.04 the radiative recombination coefficient was determined to be (3.3±0.6)×10-10 cm3s-1 for the structures with a doping concentration below 1*1018 cm-3, whereas the effective radiative recombination parameter for an absorber thickness of 2 μm was directly measured to be (0.78±0.07) ×10-10 cm3s-1. For a doping concentration of 1×1018 cm-3, the radiative recombination coefficient decreases significantly probably due to the degeneracy of the semiconductor.