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Oxygen Incorporation into Si Nanocrystal/SiC Multilayers

: Weiss, C.; Reichert, A.; Hofmann, J.; Janz, S.

Postprint urn:nbn:de:0011-n-5485874 (556 KByte PDF)
MD5 Fingerprint: f671d3c0ebba527a5eafac84c671a5b8
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Erstellt am: 20.6.2019

Institute of Electrical and Electronics Engineers -IEEE-:
Get energized with solar power. 44th IEEE Photovoltaic Specialists Conference : Washington, DC, June 25-30, 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-5605-7
ISBN: 978-1-5090-5606-4
Photovoltaic Specialists Conference (PVSC) <44, 2017, Washington/DC>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Silicium-Material; Materialien - Solarzellen und Technologie; Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen

We aimed to improve the properties of Si nanocrystal/SiC multilayers (ML) for the use as high bandgap solar cell absorber by the incorporation of oxygen (O). Therefore we compare the structural properties of Si nanocrystal/SiC ML with and without incorporated O by scanning electron microscopy, Raman spectroscopy and grazing incidence X-ray diffraction patterns. The O incorporation in the form of Si-O bonds was successful and a beneficial effect of O on the conservation of the ML structure during annealing and on the cSi/c-SiC ratio is observed and discussed in detail.