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Texturisation of Multicrystalline DWS Wafers by HF/HNO3/H2SO4 at Elevated Temperature

: Krieg, K.; Jenek, N.A.; Zimmer, M.

Volltext urn:nbn:de:0011-n-5254730 (781 KByte PDF)
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Erstellt am: 20.6.2019

Ballif, C. ; American Institute of Physics -AIP-, New York:
SiliconPV 2018, 8th International Conference on Crystalline Silicon Photovoltaics : 19-21 March 2018, Lausanne, Switzerland
Woodbury, N.Y.: AIP, 2018 (AIP Conference Proceedings 1999)
ISBN: 978-0-7354-1715-1
Art. 050004, 7 S.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <8, 2018, Lausanne>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Oberflächen-Konditionierung; Passivierung; Lichteinfang; acid; phase etching; variation; texture

The acidic texturization of multicrystalline silicon diamond wire sawn wafers (mc-Si DWS) with smooth surfaces has been a challenge for years. One possibility to texture smooth surfaces is a solution consisting of hydrofluoric acid, nitric acid and sulfuric acid (HF/HNO3/H2SO4). The favored texturing behavior of this solution instead of HF/HNO3 might be due to the high viscosity and an enhanced NOx+ generation due to the sulfuric acid. As the HF/HNO3/H2SO4 texturing process showed a decreasing reflection with increasing temperature, the temperature and time dependence of the etch depth and reflection has been evaluated. At temperatures above 45°C a texture with total reflection values of 22% at 600 nm was achieved at 15 µm total etch depth and a structure height of 2 µm in 60 s. The textured surface might be due to gas phase etching in the generated gas bubbles. This result poses a promising starting point for finding an adequate additive for the mc DWS texturing process.