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Optimization of GaAs solar cell performance and growth efficiency at MOVPE growth rates of 100 μm/h

: Lang, Robin; Schön, Jonas; Dimroth, Frank; Lackner, David

Postprint urn:nbn:de:0011-n-5250645 (660 KByte PDF)
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Erstellt am: 19.12.2018

IEEE Journal of Photovoltaics 8 (2018), Nr.6, S.1596-1600
ISSN: 2156-3381
ISSN: 2156-3403
Bundesministerium für Bildung und Forschung BMBF
03SF0525A; MehrSi
Hocheffiziente III-V Mehrfachsolarzellen auf Silicium - 'Epitaxie, Prozessierung und Charakterisierung von III-V Mehrfachsolarzellen auf Silicium
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; III-V und Konzentrator-Photovoltaik; Neuartige Photovoltaik-Technologien; Dotierung und Diffusion; III-V Epitaxie und Solarzellen

III-V devices outperform all other solar cells in terms of efficiency. However, the manufacturing of these cells is expensive and prevents their use in a number of applications, which would benefit from the high efficiency. A major contribution to the cost is the metal-organic vapor phase epitaxy process for the III-V compounds. Increasing growth rates and, hence, machine throughput, as well as the growth efficiency, are important steps toward reducing the cost of III-V solar cells. We demonstrate the growth of GaAs solar cells at extremely high growth rates of 100 μm/h and achieve a VOC of 1.028 V, a base diffusion length of 6.5 μm, and an efficiency of 23.6% under AM1.5g conditions. Furthermore, we show reactor adjustments leading to growth rates up to 140 μm/h and reach conditions where more than half of the Ga from the precursor is incorporated into the solar cell layers. The results are encouraging and demonstrate a pathway toward lower cost III-V solar cell manufacturing.