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Photonic structures for III-V//Si multi-junction solar cells with efficiency >33%

: Bläsi, Benedikt; Höhn, Oliver; Hauser, Hubert; Tucher, Nico; Cariou, Romain; Benick, Jan; Feldmann, Frank; Beutel, Paul; Lackner, David; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank; Hermle, Martin

Postprint urn:nbn:de:0011-n-5208745 (697 KByte PDF)
MD5 Fingerprint: 82a881dd50588aac1d877c150f5031f0
Copyright Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Erstellt am: 12.12.2019

Wehrspohn, R.B. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Photonics for Solar Energy Systems VII : 23-25 April 2018, Strasbourg, France
Bellingham, WA: SPIE, 2018 (Proceedings of SPIE 10688)
ISBN: 978-1-5106-1903-6
ISBN: 978-1-5106-1902-9
Paper 1068803, 11 S.
Conference "Photonics for Solar Energy Systems" <8, 2018, Strasbourg>
European Commission EC
H2020-Low Carbon Energy - New knowledge and technologies; 641023; Nano-Tandem
Nanowire based Tandem Solar Cells
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727497; SiTaSol
Application relevant validation of c-Si based tandem solar cell processes with 30 % efficiency target
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
0324247; PoTaSi
Demonstration des Potentials von monolithischen Tandemsolarzellen aus III-V Halbleitern und Silicium
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Neuartige Photovoltaik-Technologien; feedstock; Kristallisation und Wafering; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Photonenmanagement; Tandemsolarzellen auf kristallinem Silicium

Silicon based multi-junction solar cells are a promising option to overcome the theoretical efficiency limit of a silicon solar cell (29.4%). With III-V semiconductors, high bandgap materials applicable for top cells are available. For the application of such silicon based multi-junction devices, a full integration of all solar cell layers in one 2-terminal device is of great advantage. We realized a triple-junction device by wafer-bonding two III-V-based top cells onto the silicon bottom cell. However, in such a series connected solar cell system, the currents of all sub-cells need to be matched in order to achieve highest efficiencies. To fulfil the current matching condition and maximise the power output, photonic structures were investigated. The reference system without photonic structures, a triple-junction cell with identical GaInP/GaAs top cells, suffered from a current limitation by the weakly absorbing indirect semiconductor silicon bottom cell. Therefore rear side diffraction gratings manufactured by nanoimprint lithography were implemented to trap the infrared light and boost the solar cell current by more than 1 mA/cm2. Since planar passivated surfaces with an additional photonic structure (i.e. electrically planar but optically structured) were used, the optical gain could be realized without deterioration of the electrical cell properties, leading to a strong efficiency increase of 1.9% absolute. With this technology, an efficiency of 33.3% could be achieved.