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Realization of TOPCon using industrial scale PECVD equipment

: Polzin, Jana-Isabelle; Feldmann, Frank; Steinhauser, Bernd; Hermle, Martin; Glunz, Stefan W.

Postprint urn:nbn:de:0011-n-5071189 (292 KByte PDF)
MD5 Fingerprint: dd7215d381866f7122f2344aa759dc1d
Erstellt am: 7.9.2018

Ballif, C. ; American Institute of Physics -AIP-, New York:
SiliconPV 2018, 8th International Conference on Crystalline Silicon Photovoltaics : 19-21 March 2018, Lausanne, Switzerland
Woodbury, N.Y.: AIP, 2018 (AIP Conference Proceedings 1999)
ISBN: 978-0-7354-1715-1
Art. 040018, 6 S.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <8, 2018, Lausanne>
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727529; DISC
Double side contacted cells with innovative carrier-selective contacts
Bundesministerium für Wirtschaft und Technologie BMWi
0325877D; Upgrade Si-PV
Upgrade Technologien für die Silizium-Photovoltaik; Teilvorhaben: Passivated Emitter and Passivated Rearcontact Cell
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

This paper discusses the successful realization of tunnel oxide passivated contacts (TOPCon) using industry-relevant PECVD equipment. It will be shown that batch-type direct plasma PECVD allows for a damage-free deposition of doped a-Si onto an ultra-thin oxide layer. Using symmetric test structures the impact of thermally or wet-chemically grown ultra-thin interfacial SiOx layer, as well as the influence of the poly-Si doping level on the surface passivation quality will be discussed in detail. Maximum values of 736 mV iVoc and 87.4 % iFF were achieved. Additionally, asymmetric lifetime samples featuring an n-type TOPCon at the rear and a p-type TOPCon at the front demonstrated 720 mV Voc.