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Efficient hole extraction for metal oxide based silicon heterojunction solar cells: A simulation study

: Meßmer, Christoph Alexander; Bivour, Martin; Schön, Jonas; Hermle, Martin

Postprint urn:nbn:de:0011-n-5069553 (1.0 MByte PDF)
MD5 Fingerprint: 6fca12ea5a38801edaded68dc6a35a5a
Copyright AIP
Erstellt am: 1.9.2018

Ballif, C. ; American Institute of Physics -AIP-, New York:
SiliconPV 2018, 8th International Conference on Crystalline Silicon Photovoltaics : 19-21 March 2018, Lausanne, Switzerland
Woodbury, N.Y.: AIP, 2018 (AIP Conference Proceedings 1999)
ISBN: 978-0-7354-1715-1
Art. 040013, 7 S.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <8, 2018, Lausanne>
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727529; DISC
Double side contacted cells with innovative carrier-selective contacts
Bundesministerium für Wirtschaft und Technologie BMWi
0324141; SELEKTIV
Selektive Kontaktsysteme für hocheffiziente Siliziumsolarzellen; Teilvorhaben: Prozesse und Solarzellen
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
heterojunction; carrier selectivity; trap-assisted tunneling; S-shape; Photovoltaik; Silicium-Photovoltaik; Herstellung; Analyse; hocheffiziente Solarzelle; selectivity; tunneling; S-shape

To assist the engineering of novel silicon heterojunctions, numerical device simulations (Sentaurus TCAD) are used to improve knowledge regarding relevant heterojunction and thin film properties. This knowledge is necessary to understand limitations of current contacts and allow systematical optimization. With the focus on metal oxide based hole contacts, it is shown that for an ideal hole extraction from the c-Si absorber via the a-Si buffer and the transition metal oxide (TMO) into the external metal electrode, two conditions have to be fulfilled: A.) An induced c-Si pn-junction with a high p/n ratio is needed which is provided by a high metal oxide work function. B.) At the TMO/a-Si interface an efficient hole extraction into the n-type TMO must be guaranteed by band-to-band or trap-assisted tunneling. If A or/and B are not fulfilled the standard pn-junction theory is violated which results in power losses caused by insufficient hole selectivity.