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Laser-transferred niv-seed for the metallization of silicon heterojunction solar cells by Cu-plating

: Rodofili, A.; Wolke, W.; Kroely, L.; Bivour, M.; Cimiotti, G.; Bartsch, J.; Glatthaar, M.; Nekarda, J.

Volltext urn:nbn:de:0011-n-4844242 (633 KByte PDF)
MD5 Fingerprint: 1fd290993eec39e707b829d087f9c109
Erstellt am: 23.2.2018

Smets, A.:
33rd European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2017 : Proceedings of the international conference held in Amsterdam, The Netherlands, 25 September - 29 September 2017
München: WIP, 2017
ISBN: 978-3-936338-47-8
ISBN: 3-936338-47-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <33, 2017, Amsterdam>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Photovoltaik; Silicium-Photovoltaik; Kontaktierung und Strukturierung; Herstellung und Analyse von hocheffizienten Solarzellen; laser-processing; heterojunction; metallization; plating

We present results about a laser-based method for the metallization of silicon heterojunction solar cells by Cu-plating. The method consists of first depositing a dielectric layer as plating mask onto the transparent conductive oxide (TCO) and then depositing a NiV seed layer onto the plating mask by laser induced forward transfer (LIFT). Afterwards, the seed layer is fired through the plating mask in a second laser step in order to form a contact to the TCO. By dividing the process into laser transfer and firing (LTF) each step can be optimized separately. The final metallization is produced by Cu-plating. A pulse plating process is applied to further reduce parasitic plating. Different dielectric layers are tested as plating masks for their resistance against parasitic plating. The combination of a 15 nm thick Al2O3 layer as plating mask in conjunction with pulse plating is completely free of parasitic plating. Finally an efficiency of 22.2% is reached outperforming the screen printed reference cells by 0.5%abs.