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Growth of large scale silicon crystals by the rf-heated float zone technique

: Zobel, F.; Mosel, F.; Störensen, J.; Dold, P.

Volltext urn:nbn:de:0011-n-4844186 (417 KByte PDF)
MD5 Fingerprint: 660569a7493d3b8601b58815e43d571a
Erstellt am: 20.2.2018

Baake, E. ; Leibniz Universität Hannover; International Union for Electricity Applications -UIE-:
XVIII International UIE-Congress - Electrotechnologies for Material Processing 2017 : Hannover (Germany), June 6-9, 2017
Essen: Vulkan-Verlag, 2017
ISBN: 3-8027-3095-X
ISBN: 978-3-8027-3095-5
International Congress "Electrotechnologies for Material Processing" <2017, Hannover>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaische Module; Systeme und Zuverlässigkeit; Photovoltaik; Silicium-Photovoltaik; Feedstock; Kristallisation und Wafering; cristallisation

Improvements of the radio-frequency (rf) heating for Float Zone growth of silicon single crystals are presented. Details with respect to the shape and design of the rf-inductor are described. The specific growth parameters for 4" and 6" ingots are given and the required power consumption is discussed. The formation of spikes during the melting of the feed rod is set in relation to the frequency and temperature dependence of the skin-depth. The doping via the gas phase is explained and results for the absorption efficiency are presented.