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Interdigitated back contact silicon solar cells featuring ion-implanted poly-Si/SiOx passivating contacts

: Reichel, C.; Müller, R.; Feldmann, F.; Richter, A.; Hermle, M.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-4774617 (495 KByte PDF)
MD5 Fingerprint: 17235c3bd0013c2039664dc47fa7c657
Erstellt am: 16.1.2018

Smets, A.:
33rd European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2017 : Proceedings of the international conference held in Amsterdam, The Netherlands, 25 September - 29 September 2017
München: WIP, 2017
ISBN: 978-3-936338-47-8
ISBN: 3-936338-47-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <33, 2017, Amsterdam>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

Interdigitated back contact (IBC) silicon solar cells featuring passivating contacts based on tunneling oxides (SiOx) and n- and p-type polycrystalline silicon (poly-Si) thin films were fabricated with different rear side configurations to show the impact of the recombination in the transition region between p-type and n-type poly-Si on the performance of the solar cells. On the one hand a) p+ and n+ poly-Si regions were in direct contact to each other (“no gap”) using a local overcompensation (counterdoping) as a self-aligning process and on the other hand b) undoped (intrinsic) poly-Si remained between the p+ and n+ poly-Si regions (“gap”). These configurations were investigated in terms of recombination characteristics by illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and were compared to solar cells that featured c) etched trenches separating the p+ and n+ poly-Si regions (“trench”). While the latter configuration allowed for open-circuit voltages (Voc) of 720 mV, fill factor (FF) of 79.6%, and short-circuit current (Jsc) of 41.3 mA/cm2, resulting in conversion efficiencies () of 23.7%, solar cells without a trench showed a poor performance due to non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions. Therefore, Voc of only 593 mV and FF of only 61.3% were achieved for the “no gap” configuration whereas for the “gap” configuration higher Voc of 680 mV but also low FF of 65.6% were obtained.