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Material limits of silicon from state-of-the-art photoluminescence imaging techniques

: Schindler, F.; Giesecke, J.; Michl, B.; Schön, J.; Krenckel, P.; Riepe, S.; Warta, W.; Schubert, M.C.

Volltext urn:nbn:de:0011-n-4111352 (884 KByte PDF)
MD5 Fingerprint: 1faf729a6e31cc5adb34100ebfcfe545
Erstellt am: 7.10.2016

European Commission:
32nd European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2016 : 20 - 24 June 2016, Munich, Germany
Munich, 2016
ISBN: 3-936338-41-8
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <32, 2016, Munich>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; imaging; silicon; imaging; PL; limit

This work reports on state-of-the-art silicon material characterization by calibrated photoluminescence imaging (PLI). PL imaging techniques allow for a characterization of a large variety of material properties, ranging from bulk and surface recombination properties of bare silicon ingots, to crystal structure, dopant concentration and bulk lifetime of silicon wafers up to material limiting impurities. In combination with solar cell simulations, injec-tion-dependent PLI of processed wafers provides a method for determining the material’s efficiency potential. In this contribution, we present two methods for imaging the concentration of interstitial iron at passivated silicon slices and at unpassivated silicon ingots. The latter is achieved by our latest progress in PL-based charge carrier bulk lifetime measurements with highest sensitivity, giving access to the bulk recombination properties of the ingot. Additionally, we present an improved analysis of specific loss mechanisms in silicon based on de-smeared injection-dependent life-time images of processed wafers, which is demonstrated on the example of the bulk-related efficiency limitations in high-performance multicrystalline silicon. This latest progress rounds off the established techniques, enhancing the potential of PL based imaging techniques for a comprehensive assessment of silicon material quality, from limitations in bare silicon ingots to efficiency loss mechanisms in processed samples.