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Gallium phosphide window layer for silicon solar cells

: Feifel, M.; Rachow, T.; Benick, J.; Ohlmann, J.; Janz, S.; Hermle, M.; Dimroth, F.; Lackner, D.

Postprint urn:nbn:de:0011-n-3791504 (611 KByte PDF)
MD5 Fingerprint: 92a89dee20caef5c4f7116f76eb43e48
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Erstellt am: 16.8.2019

IEEE Journal of Photovoltaics 6 (2016), Nr.1, S.384-390
ISSN: 2156-3381
ISSN: 2156-3403
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Silicium-Photovoltaik; III-V und Konzentrator-Photovoltaik; Modulintegration; III-V Epitaxie und Solarzellen; silicon; heterojunction solar cells; GaP on Si; heteroepitaxy; material; layer; MOVPE; solar cell

The integration of III-V compound semiconductors on a silicon bottom cell offers the opportunity to form two- and three-junction solar cells with a conversion efficiency exceeding 30%. This paper reports on the progress in the heteroepitaxial nucleation of gallium phosphide (GaP) on silicon, which allows the fabrication of a silicon bottom cell with front-surface passivation by a thin single-crystalline GaP window layer. GaP has a low lattice-mismatch to Si and an indirect bandgap energy of 2.26 eV, which leads to low absorption. At the same time, GaP can be doped with silicon to form an n-type contact layer. In this publication, we investigate n-Si/p-Si homojunction solar cells with a GaP window and contact layer. Metal-organic vapor phase epitaxy was used to deposit the 60-nm GaP window layer with a low density of antiphase boundaries at the heterointerface and without misfit dislocations. Open-circuit voltages of up to 634 mV have been obtained under 1-sun AM1.5g conditions for devices without antireflective coatings.