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Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water

: Moldovan, A.; Feldmann, F.; Kaufmann, K.; Richter, S.; Werner, M.; Hagendorf, C.; Zimmer, M.; Rentsch, J.; Hermle, M.

Volltext urn:nbn:de:0011-n-3668609 (385 KByte PDF)
MD5 Fingerprint: b529a8d997bdc38351a5cbc980ea4d3b
Erstellt am: 25.11.2015

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Photonics Society:
IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 : 14-19 June 2015, New Orleans, LA
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-7944-8
6 S.
Photovoltaic Specialists Conference (PVSC) <42, 2015, New Orleans/La.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Herstellung und Analyse von hocheffizienten Solarzellen; carrier-selective contacts; oxide; photo-oxidation; oxidation; ozone

A successful application of carrier selective contacts was demonstrated by using the tunnel oxide passivated contact (TOPCon) approach yielding a 24.9% efficient solar cell. A key factor of this contact is the ultra-thin SiOx tunnel layer which reduces interface recombination significantly but must not restrict carrier flow. Within this paper a comparison between the standard wet-chemical HNO3 oxide, a dry-grown UV/O3 oxide, and a wet-chemically grown oxide by using ozonized DI-H2O is drawn. The oxides’ stoichiometry and structure are analyzed and will be set in relation with the effective surface passivation. It will be demonstrated that beneath certain UV/O3 oxides also wet-chemically grown oxides offer a high thermal stability during the annealing and can improve the passivation of n-TOPCon, especially on textured surfaces.