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Analysis of edge recombination for high-efficiency solar cells at low illumination densities

: Hermle, M.; Dicker, J.; Warta, W.; Glunz, S.W.; Willeke, G.

Volltext urn:nbn:de:0011-n-341541 (81 KByte PDF)
MD5 Fingerprint: f9879ca22ff96365a7633b0fcda9a1fb
Erstellt am: 26.10.2012

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Indoor applications of high-efficiency silicon solar cells implicate illumination densities that are significantly below 1 sun. Our investigations show that at low illumination densities, solar cells are very sensitive to the recombination at the cell edges. We have analyzed the different recombination channels at the perimeter by means of two-dimensional device simulation and experiments. The modeling shows, that at low illumination densities the main recombination channel at the perimeter is due to the surface recombination in the space charge region. The surface recombination velocity at the cell perimeter could be extracted by comparison of the simulated and measured open-circuit voltages. Our investigation shows that the perimeter loss can be reduced drastically by an optimized passivation scheme