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Front side antireflection concepts for silicon solar cells with diffractive rear side structures

: Bett, A.; Eisenlohr, J.; Höhn, O.; Bläsi, B.; Benick, J.; Repo, P.; Savin, H.; Goldschmidt, J.C.; Hermle, M.

Volltext urn:nbn:de:0011-n-3154482 (604 KByte PDF)
MD5 Fingerprint: fc7397d5505f8e641cc923afda9cdde8
Erstellt am: 2.12.2014

Bokhoven, T.P. ; European Commission:
29th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2014 : Proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014, DVD
München: WIP, 2014
ISBN: 3-936338-34-5
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <29, 2014, Amsterdam>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Farbstoff; Organische und Neuartige Solarzellen; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Photonenmanagement; Coating; silicon; efficiency; trapping; solar cell

For thin silicon solar cells, standard pyramidal textures cannot be used as antireflection structures due to their thicknesses of several micrometres. In this paper, we investigate two alternative front side antireflection surfaces, which in combination with diffractive rear side structures could lead to low surface reflectance and advanced light trapping: firstly, planar multi-layer antireflection coatings, optimized using experimentally determined refractive indices, have been produced. The resulting hemispheric reflectance weighted with the AM1.5g spectrum (280 nm to 1000 nm) for two and three optimized planar layers were 3.67 % and 3.52 %, respectively, slightly higher than for a sample with inverted pyramids with 3.09 %. Secondly, black silicon was investigated. This acicular nanostructured silicon surface has a very low reflectance over a wide range of the spectrum (weighted reflectance 1.21 %). Reflection and transmission measurements show that a black silicon surface leads to scattering and light trapping. As we see significant absorption for energies below the silicon bandgap for all samples with structured surfaces, possible mechanisms leading to these measurement results were analysed.