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A passivated rear contact for high-efficiency n-Type silicon solar cells enabling high VocS and FF>82%

: Feldmann, F.; Bivour, M.; Reichel, C.; Hermle, M.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-2669551 (294 KByte PDF)
MD5 Fingerprint: 54def8bfbc811a4f04563c4540fb73e3
Erstellt am: 6.12.2013

Mine, A. ; European Commission:
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013. Proceedings. DVD-ROM : 30 September to 04 October 2013, Paris, France
München: WIP-Renewable Energies, 2013
ISBN: 3-936338-33-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <28, 2013, Paris>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen; Modulintegration; MIS; n-type; contact

Due to the improvements in material quality and surface passivation, high-efficiency solar cells are often limited by the recombination at the metal semiconductor contacts. As a solution to this problem, Swanson proposed “to put a heterojunction with a band-gap larger than silicon between the metal and silicon”[1] also known as passivated contact. In this work, a tunnel oxide passivated contact (TOPCon) structure allowing both an excellent surface passivation and an effective carrier transport is presented. High-efficiency n-type solar cells featuring this novel passivated rear contact instead of a point contact structure at the rear side yield a maximum efficiency of 23.7 %, a FF of 82.2 % and a Voc of 703 mV.