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Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding

: Derendorf, K.; Essig, S.; Oliva, E.; Klinger, V.; Roesener, T.; Philipps, S.P.; Benick, J.; Hermle, M.; Schachtner, M.; Siefer, G.; Jäger, W.; Dimroth, F.

Postprint urn:nbn:de:0011-n-2644774 (765 KByte PDF)
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Erstellt am: 25.4.2014

IEEE Journal of Photovoltaics 3 (2013), Nr.4, S.1423-1428
ISSN: 2156-3381
ISSN: 2156-3403
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; Farbstoff; Organische und Neuartige Solarzellen; Alternative Photovoltaik-Technologien; III-V Epitaxie und Solarzellen; Tandemsolarzellen auf kristallinem Silicium; Solarzellen und Bauelemente; heterojunctions; semiconductor materials; solar cell; bonding

GaInP/GaAs//Si solar cells with three active p-n junctions were fabricated by surface activated direct wafer bonding between GaAs and Si. The direct wafer bond is performed at room temperature and leads to a conductive and transparent interface. This allows the fabrication of high-efficiency monolithic tandem solar cells with active junctions in both Si and the III-V materials. This technology overcomes earlier challenges of III-V and Si integration caused by the large difference in lattice constant and thermal expansion. Transmission electron microscopy revealed a 5-nm thin amorphous interface layer formed by the argon fast atom beam treatment before bonding. No further defects or voids are detected in the photoactive layers. First triple-junction solar cell devices on Si reached an efficiency of 23.6% under concentrated illumination.