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An experimental and theoretical study on the temperature dependence of GaAs solar cells

: Philipps, S.P.; Hoheisel, R.; Gandy, T.; Stetter, D.; Hermle, M.; Dimroth, F.; Bett, A.W.

Preprint urn:nbn:de:0011-n-2087664 (52 KByte PDF)
MD5 Fingerprint: 76eb01bc86beda1050838e1224dca34a
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Erstellt am: 8.8.2014

IEEE Electron Devices Society:
37th IEEE Photovoltaic Specialists Conference, PVSC 2011 : 19-24 June 2011, Seattle, WA, USA
Piscataway, NJ: IEEE, 2011
ISBN: 978-1-4244-9966-3
ISBN: 978-1-4244-9965-6 (print)
Photovoltaic Specialists Conference (PVSC) <37, 2011, Seattle/Wash.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this paper the temperature-dependent behavior of GaAs single-junction solar cells is studied using both experimental and simulation tools. A cryostat is used to allow measurements of the external quantum efficiency (EQE) and IV curve at different temperatures with the corresponding experimental setup at Fraunhofer ISE. Two different GaAs single-junction solar cell structures are characterized in a wide temperature range between 203 K and 398 K. Through numerical modeling of the GaAs solar cells in a semiconductor simulation environment a deeper understanding of the cells' temperature-dependent behavior is obtained. A good correlation between measurement and simulation results is achieved.