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Aluminum alloying in local contact areas on dielectrically passivated rear surfaces of silicon solar cells

: Rauer, M.; Woehl, R.; Rühle, K.; Schmiga, C.; Hermle, M.; Hörteis, M.; Biro, D.

Postprint urn:nbn:de:0011-n-1897482 (219 KByte PDF)
MD5 Fingerprint: 5d682d340905d56113fca4aa59157dc9
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Erstellt am: 23.5.2013

IEEE Electron Device Letters 32 (2011), Nr.7, S.916-918
ISSN: 0741-3106
ISSN: 0193-8576
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Kontaktierung und Strukturierung; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen

We present a detailed study on the rear contact formation of rear-surface-passivated silicon solar cells by full-area screen printing and alloying of aluminum pastes on the locally opened passivation layer. We demonstrate that applying conventional Al pastes exhibits two main problems: 1) high contact depths leading to an enlargement of the contact area and 2) low thicknesses of the Al-doped p+ Si regions in the contact points resulting in poor electron shielding. We show that this inadequate contact formation can be directly linked to the deficiently low percentage of silicon that dissolves into the Al-Si melt during alloying. Thus, by intentionally adding silicon to the Al paste, we could significantly improve the contact geometry by reducing the contact depth and enlarging the Al-p+ thickness in the contact points, enabling a simple industrially feasible way for the rear contact formation of silicon solar cells.