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Decoupling charge carrier collection and metallization geometry of back-contacted back-junction silicon solar cells by using insulating thin films

: Reichel, C.; Reusch, M.; Granek, F.; Hermle, M.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-1567841 (305 KByte PDF)
MD5 Fingerprint: 3e1ac5f8046ca21af13c88110ea44a35
Erstellt am: 4.8.2012

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.2 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway, NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Herstellung und Analyse von hocheffizienten Solarzellen; Feedstock; Kristallisation und Wafering

Back-contacted back-junction silicon solar cells with a large emitter coverage (point-like base contacts) and a small emitter coverage (point-like emitter and base contacts) have been fabricated and analyzed. These solar cells feature an insulating thin film on the rear side in order to decouple the charge carrier collection geometry and the geometry of the metallization. It has been found, that for the investigated solar cells an increased collection efficiency is observed due to a significant reduction of electrical shading losses. Thus, high short-circuit currents could be achieved for both solar cell structures. Different insulating thin films, such as ALD Al2O3 and PECVD SiOx have been investigated. It has been found that ALD layers are already insulating for a thinner film thickness. By applying these insulating thin films to the investigated solar cell structures no significant shunts are introduced. For solar cells on 1 ohmcm n-type material and with a large emitter coverage an efficiency of 21.9% (V(ind oc) = 673 mV, J(ind sc) = 40.6 mA/cm2, FF = 80.1%) could be obtained and for solar cells with a small emitter coverage an efficiency of 22.7% (V(ind oc) = 706 mV, J(ind sc) = 41.0 mA/cm2, FF = 78.5%) has been achieved.