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Simplifying the manufacturing of n-type silicon solar cells with screen-printed aluminium-alloyed rear emitter

: Rauer, M.; Schmiga, C.; Meyer, K.; Lossen, J.; Krokoszinski, H.-J.; Hermle, M.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-1567821 (1.5 MByte PDF)
MD5 Fingerprint: b0cc9c5ec35797d52522ffec540f34c0
Erstellt am: 11.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
M√ľnchen: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen; Produktionsanlagen und Prozessentwicklung

This work focuses on simplifying the fabrication process of our near-industrial n-type silicon solar cells with screen-printed aluminium-alloyed rear emitter. We investigate the structural and electrical properties of Al emitters alloyed on differently prepared Si surfaces. We demonstrate that the formation of a proper emitter neither requires a planar nor a non-diffused rear surface, thus allowing both-sided surface texturing and both-sided phosphorous doping during the n+ front surface field diffusion without the need of an additional protecting rear masking layer. On textured surfaces a careful choice of the printing and alloying conditions is essential to obtain Al-p+ emitters without shunts in form of locally non-alloyed regions. By adjusting the alloying conditions or by applying a simple rear surface conditioning step, shunts can be effectively prevented, thereby simultaneously increasing the internal reflectance and reducing the Al-p+ emitter saturation current density. Al alloying on P-diffused rear surfaces is shown to be uncritical. In summary, we demonstrate that Al alloying for p+ emitter formation can be easily realised on textured and P-diffused surfaces leading to a much more flexible fabrication of our n-type silicon solar cells.