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Optimization and analysis of deposition processes of amorphous silicon for silicon heterojunction solar cells

: Meinhardt, C.; Pysch, D.; Bivour, M.; Zimmermann, K.; Schetter, C.; Hermle, M.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-1567610 (101 KByte PDF)
MD5 Fingerprint: 0647642c364f7daabf6a7bd7798845f2
Erstellt am: 9.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Industrielle und neuartige Solarzellenstrukturen; Produktionsanlagen und Prozessentwicklung

Intrinsic hydrogenated amorphous silicon a-Si:H(i) offers a very good passivation quality. Adding dopants to the deposition reduces the passivation quality. However, sufficient doping is needed to build the p-n-junction which is essential to gain an actual voltage. Furthermore, the conductivity of the a-Si:H is also a function of the dopant concentration. Poor conductivities in the emitter layer causes high series resistances, limiting fill factor and cell efficiency. To achieve good passivation quality, sufficient band bending and low resistivity simultaneously, we have introduced a new approach of applying a doping profile to the deposition of the amorphous emitter layer. The conventional concept to process silicon heterojunction (SHJ) solar cells is to deposit a heavily doped a:Si-H(n or p) layer on a thin intrinsic one. In this paper we will compare structures with gradually doped emitter profiles to conventional ones. Gradually doped emitters are processed in one single deposition step, which offers simple and fast processing. The total electrical conductivity can be increased by a well chosen doping profile. This is shown by simulations based on conductivity measurements and full heterojunction solar cells. The best n-type, FZ wafer heterojunction solar cell realized within this first investigation has an efficiency of 18.9%.